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Let CD be the building such that CD = 100 m.Let AB be the tower of height h metre. It is given that the angles of depression of the top A and the bottom B of t
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Diffusion and Drift are the two processes that take place in the formation of a p-n junction.
In an n-type semiconductor, the concentration of electrons (number of electrons per unit volume) is more compared to the concentration of holes. Similarly, in a P -type semiconductor, the concentration of holes is more than the concentration of electrons. During the formation of p-n junction.

Due to the diffusion of electrons and holes across the junction a region of
(immobile) positive charge is created on the n-side and a region of(immobile) negative charge is created on the p-side, near the j
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Both the episodes in this unit highlight the despise, racial discrimination, and unhealthy treatment towards the humanity in general and women in particular. T
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